发明名称 Semiconductor light emitting device and method for manufacturing same
摘要 <p>There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.</p>
申请公布号 EP1921686(A2) 申请公布日期 2008.05.14
申请号 EP20080000975 申请日期 2001.03.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUGAWARA, HIDETO;NITTA, KOICHI;ABE, HIROHISA;KONNO, KUNIAKI;IDEI, YASUO
分类号 H01L33/00;H01L33/30;H01L33/32;H01L33/50 主分类号 H01L33/00
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