发明名称 |
Semiconductor light emitting device and method for manufacturing same |
摘要 |
<p>There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.</p> |
申请公布号 |
EP1921686(A2) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20080000975 |
申请日期 |
2001.03.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGAWARA, HIDETO;NITTA, KOICHI;ABE, HIROHISA;KONNO, KUNIAKI;IDEI, YASUO |
分类号 |
H01L33/00;H01L33/30;H01L33/32;H01L33/50 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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