| 摘要 |
An organic transistor and a manufacturing method thereof are provided to suppress a crosstalk between lower and upper organic transistors by forming a metal film on a planarization film region, which is formed between the lower and upper organic transistors. An organic transistor includes a first organic transistor structure(100), a first protective film(112), a second protective film(114), planarization films(116,120), and a second organic transistor structure(130). The first organic transistor structure includes a gate electrode, an organic transistor layer, and a source/drain electrode, and is formed on a substrate. The first protective film is formed at an exposed portion of the organic semiconductor layer and a portion of an upper portion of the source/drain region. The second protective film is formed on the first organic transistor structure and the first protective film. The planarization films are formed on the second protective film. The second organic transistor structure includes a gate electrode, an organic transistor layer, and a source/drain electrode, and is formed on the planarization film.
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