发明名称 |
SILICON CARBIDE BASED POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss.</p> |
申请公布号 |
EP1493722(B1) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20030715654 |
申请日期 |
2003.03.31 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
TABUCHI, YUUICHIROU;FURUKAWA, MASAHIRO;MORIMOTO, KENJI;KAWASAKI, SHINJI |
分类号 |
C04B35/565;B01D39/20;B01D46/24;B01D53/94;B01J35/04;C04B38/06;C04B38/08;F01N3/022;F01N3/28 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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