发明名称 Gas sensor with attenuated drift characteristic
摘要 A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention.
申请公布号 US7370511(B1) 申请公布日期 2008.05.13
申请号 US20040795529 申请日期 2004.03.08
申请人 MST TECHNOLOGY GMBH 发明人 CHEN ING-SHIN;DIMEO, JR. FRANK;CHEN PHILIP S. H.;NEUNER JEFFREY W.;WELCH JAMES;HENDRIX BRYAN
分类号 G01N33/00 主分类号 G01N33/00
代理机构 代理人
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