发明名称 |
Method of manufacturing a field effect transistor device with recessed channel and corner gate device |
摘要 |
Fabrication of recessed channel array transistors (RCAT) with a corner gate device includes forming pockets between a semiconductor fin that includes a gate groove and neighboring shallow trench isolations that extend along longs sides of the semiconductor fin. A protection liner covers the semiconductor fin and the trench isolations in a bottom portion of the gate groove and the pockets. An insulator collar is formed in the exposed upper sections of the gate groove and the pockets, wherein a lower edge of the insulator collar corresponds to a lower edge of source/drain regions formed within the semiconductor fin. The protection liner is removed. The bottom portion of the gate groove and the pockets are covered with a gate dielectric and a buried gate conductor layer. The protection liner avoids residuals of polycrystalline silicon between the active area in the semiconductor fin and the insulator collar.
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申请公布号 |
US7371645(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20050321450 |
申请日期 |
2005.12.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MUEMMLER KLAUS;BAARS PETER;TEGEN STEFAN |
分类号 |
H01L21/336;H01L21/8242;H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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