METOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for fabricating a TFT substrate is provided to improve an aperture ratio and reduce the size of a TFT substrate by improving the layer quality of a first active layer so that the charge mobility of a channel region is increased. A gate interconnection and a gate insulation layer(30) are sequentially formed on an insulation substrate(10). A first hydrogen plasma process is performed on the gate insulation layer. A first active layer(41) of a first thickness is formed on the gate insulation layer at a first deposition rate. A second hydrogen plasma process is performed on the first active layer wherein the power per unit area applied to a chamber can be 0.04-0.06 W/centimeter^2. A second active layer of a second thickness greater than the first thickness is formed on the first active layer at a second deposition rate higher than the first deposition rate.