发明名称 |
Organic field effect transistor and method of manufacturing the same |
摘要 |
To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.
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申请公布号 |
US7372070(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20050127178 |
申请日期 |
2005.05.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YATSUNAMI RYUICHI;SAKANOUE KEI |
分类号 |
H01L51/10;H01L21/00;H01L35/24;H01L51/00;H01L51/05 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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