发明名称 Organic field effect transistor and method of manufacturing the same
摘要 To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a gate insulating film 3 interposed therebetween; and a source electrode 6 and a drain electrode 7 provided so as to come in contacts with the organic semiconductor film with the gate electrode 8 interposed therebetween. At least one of the source electrode 6 and the drain electrode 7 is formed in contact with the organic semiconductor film 2 with charge injection layers 4 and 5 made of an inorganic material interposed therebetween.
申请公布号 US7372070(B2) 申请公布日期 2008.05.13
申请号 US20050127178 申请日期 2005.05.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YATSUNAMI RYUICHI;SAKANOUE KEI
分类号 H01L51/10;H01L21/00;H01L35/24;H01L51/00;H01L51/05 主分类号 H01L51/10
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