发明名称 |
Solid-state imaging device and radiotion imaging system |
摘要 |
N<SUP>+</SUP>-type semiconductor regions 12 d are formed on a front surface side of a p<SUP>-</SUP>-type layer 12 c of a semiconductor substrate 12 , and these n<SUP>+</SUP>-type semiconductor and p<SUP>-</SUP>-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12 e is formed on a first insulating layer 13 . The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p<SUP>-</SUP>-type layer 12 c and n<SUP>+</SUP>-type semiconductor regions 12 d) exposed on a light-incident surface of the semiconductor substrate 12 (p<SUP>-</SUP>-type layer 12 c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12 e is set at the ground potential.
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申请公布号 |
US7372037(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20050536904 |
申请日期 |
2005.11.18 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
MORI HARUMICHI;FUJITA KAZUKI;KYUSHIMA RYUJI;HONDA MASAHIKO |
分类号 |
G01T1/24;H01L27/146;H01L27/14;H01L31/09;H01L31/10;H04N5/32;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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