| 发明名称 |
Semiconductor device fabrication method and fabrication apparatus |
| 摘要 |
The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium solution to the surface a silicon substrate in which at least the silicon surface is locally exposed.
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| 申请公布号 |
US7371694(B2) |
申请公布日期 |
2008.05.13 |
| 申请号 |
US20050056128 |
申请日期 |
2005.02.14 |
| 申请人 |
ELPIDA MEMORY INC. |
发明人 |
SASAKI KEN;SAKAUE HIROYUKI;TAKAHAGI TAKAYUKI |
| 分类号 |
H01L21/28;H01L21/302;H01L21/02;H01L21/306;H01L21/461;H01L21/4763;H01L21/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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