发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device manufacturing method capable of improving the semiconductor device manufacturing yield is disclosed. Semiconductor chips are mounted respectively over semiconductor device regions of a matrix wiring substrate having plural semiconductor device regions, followed by wire bonding, and thereafter sealing resin is formed at a time onto the semiconductor device regions. Thereafter, target marks for dicing are formed on an upper surface of the sealing resin on the basis of target marks pre-formed on an upper surface of the wiring substrate. Then, half-dicing is performed from the upper surface side of the sealing resin 5 a on the basis of the target marks for dicing to form grooves whose bottoms reach the wiring substrate. Subsequently, solder balls are connected to a lower surface of the wiring substrate and dicing is performed from a lower surface side of the wiring substrate for division into individual semiconductor devices.
申请公布号 US7371613(B2) 申请公布日期 2008.05.13
申请号 US20070734996 申请日期 2007.04.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 SHIMANUKI YOSHIHIKO
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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