| 发明名称 |
Method of making a trench MOSFET with deposited oxide |
| 摘要 |
A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body.
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| 申请公布号 |
US7371641(B2) |
申请公布日期 |
2008.05.13 |
| 申请号 |
US20050261896 |
申请日期 |
2005.10.28 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MONTGOMERY ROBERT |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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