摘要 |
<p>A 4T-4S step & repeat unit cell, an image sensor, a data storage device, a semiconductor process mask and a semiconductor wafer having the same are provided to configure the 4T-4S step & repeat unit cell by integrating four image sensor unit cells having four transistors, thereby providing convenience when performing layout of a two-dimensional image sensor and more simply and quickly processing signals. A 4T(Transistor)-4S(Shared) step & repeat unit cell(200) comprises the followings. A second photodiode(1,0) is disposed in an upper part of a first photodiode(0,0). A third photodiode(1,1) is disposed one side of the second photodiode. A fourth photodiode(2,1) is disposed in an upper part of the third photodiode. The first to third photodiodes are coupled with five transistors to configure a first shared image sensor unit cell(210). The second to fourth photodiodes are coupled with five transistors to configure a second shared image sensor unit cell(220). Signals corresponding to images applied to the first to third photodiodes are outputs through a first common detection line(OUT1). Signals corresponding to images applied to the second to fourth photodiodes are outputted through a second common detection line(OUT2). One terminal of the four photodiodes is connected to a first power source.</p> |