| 摘要 |
A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to the conductive portion, and a barrier metal layer is formed to cover a bottom portion of side wall portion of the contact hole. A tungsten layer is formed from a material gas containing fluorine and the fluorine is removed from the tungsten layer through a post purge process. The tungsten layer is formed to fill the contact hole in which the barrier metal layer has been formed.
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