| 摘要 |
The present invention is related to a semiconductor memory device improving refresh performance by reliably generating an internal voltage. The internal voltage generator for use in the semiconductor memory device includes a cell plate voltage generator, a driving voltage generator, and a bit line precharge voltage generator. The bit line precharge voltage generator includes a half driving voltage generator for receiving the driving voltage to thereby generate the bit line precharge voltage, a second reference voltage generator for generating the second reference voltage, and a bit line precharge voltage releasing device for discharging a surplus voltage.
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