| 摘要 |
A DRAM semiconductor memory device with increased reading accuracy and a method for increasing the reading accuracy of a DRAM memory cell are provided. First and second bit lines are connected to a sense amplifier and are connected in each case to a further memory cell. The gates of the further memory cells are driven via a driving circuit device. An equalization voltage of the two bit lines is influenced in the event of a precharge operation, and a capacitive disequilibrium is avoided at inputs of a sense amplifier due to the voltages on the bit lines in the event of reading the memory cell.
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