发明名称 Method for making a semiconductor device having increased conductive material reliability
摘要 A method and apparatus for a semiconductor device having a semiconductor device having increased conductive material reliability is described. That method and apparatus comprises forming a conductive path on a substrate. The conductive path made of a first material. A second material is then deposited on the conductive path. Once the second material is deposited on the conductive path, the diffusion of the second material into the conductive path is facilitated. The second material has a predetermined solubility to substantially diffuse to grain boundaries within the first material.
申请公布号 US7372165(B2) 申请公布日期 2008.05.13
申请号 US20050077252 申请日期 2005.03.09
申请人 INTEL CORPORATION 发明人 DUBIN VALERY M.;CHEBIAM RAMANAN V.
分类号 H01L29/40;H01L21/768;H01L23/48;H01L23/52;H01L23/532 主分类号 H01L29/40
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