发明名称 |
Vertical gallium-nitride based light emitting diode |
摘要 |
A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
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申请公布号 |
US7372078(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20060581003 |
申请日期 |
2006.10.16 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
JANG TAE SUNG;LEE SU YEOL;CHOI SEOK BEOM |
分类号 |
H01L33/06;H01L33/10;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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