| 摘要 |
A method for fabricating a storage node contact hole of a semiconductor device includes: forming an inter-layer insulation layer over a substrate; forming a hard mask over the inter-layer insulation layer; etching the inter-layer insulation layer to form a storage node contact hole; forming a passivation layer to fill the storage node contact hole; removing the hard mask with an etch rate of the hard mask faster than that of the inter-layer insulation layer; and removing the passivation layer.
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