CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

摘要

A chemical mechanical polishing device and a method thereof are provided to prevent occurrence of unbalanced polishing due to a change of a profile of a polishing pad by adjusting relative height of each polishing pad with multiple lifting blocks. A chemical mechanical polishing device for a wafer comprises the followings: a polishing pad(120) polishing the wafer(W) by contacting a surface of the wafer; and a platen(110) where the polishing pad is attached. The platen supports the polishing pad to adjust height independently according to an area of the polishing pad, and includes multiple lifting blocks(112,114) adjusting height independently.