发明名称 |
SOI chip with recess-resistant buried insulator and method of manufacturing the same |
摘要 |
A semiconductor-on-insulator structure includes a substrate and a buried insulator stack overlying the substrate. The buried insulator stack includes a first dielectric layer and a recess-resistant layer overlying the first dielectric layer. A second dielectric layer can overlie the recess-resistant layer. A semiconductor layer overlying the buried insulator stack. Active devices, such as transistors and diodes, can be formed in the semiconductor layer.
|
申请公布号 |
US7372107(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20050207681 |
申请日期 |
2005.08.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;HU CHENMING |
分类号 |
H01L23/62;H01L21/20;H01L21/31;H01L21/762;H01L21/84;H01L27/01;H01L27/12 |
主分类号 |
H01L23/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|