| 摘要 |
Provided is a photographing apparatus (CMOS image sensor) that enables enlarging the area that the PD occupies by making simple the layout within a pixel wherein a photo-electric conversion element and a plurality of CMOS transistors are laid out. The photographing apparatus is the one 1 wherein a photo-diode 11 constituting the photo-electric conversion element and a plurality of transistors 12, 13, 14 , and 15 are laid out in parallel in the column arrangement direction of the pixels 10 that are arrayed in the form of a lattice. In the apparatus, further, the pixels 10 are each arrayed in the way of being shifted half the length of the pixel 10 in the column arrangement direction every row. Within the pixel 10 , by arraying the photo-diode 11 and the plurality of transistors 12, 13, 14 , and 15 in parallel in the way that either arrangement thereof is positioned in one vertical column, it is possible to increase the occupied-area percentage of the photo-diode 11 as well as the width of the gate electrode of the transistor.
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