| 摘要 |
A method for erasing data of a NAND flash memory device is provided to improve the operation reliability of the device by omitting a pre-program influencing program-worst influence in a reliability experiment of program/erase cycling. According to a method for erasing data of a NAND flash memory device including a plurality of memory cells programmed with data as being connected to N word lines, data of the programmed memory cell is erased. Post-program is performed sequentially by applying a program bias to each word line for the memory cell(290). The post-program step includes a step of programming one word line and a step of verifying the memory cell connected to the programmed word line repetitively.
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