| 摘要 |
A method for forming a semiconductor device is provided to prevent the corrosion due to a heterogeneous metal contact generated between an aluminium layer and a silver layer by forming a DARC(Dielectric Anti Reflective Coating) layer on the whole surface of a semiconductor substrate including a pattern. An oxide layer(102) is formed on a semiconductor substrate(100). A first Ti/TiN layer(104) is formed on an upper portion of the oxide layer. An interlayer metal film(105) is formed on an upper portion of the first Ti/TiN layer. An second Ti/TiN layer(120) is formed on an upper portion of the interlayer metal film. The second Ti/TiN layer, the interlayer metal film, and first Ti/TiN layer are selectively etched by using a dry-etching process, so that a part of the oxide layer is exposed to form a pattern. Aluminium layers(108,112,116) are formed on the whole surface of the semiconductor substrate including the pattern. Nitrification is performed on the aluminium layers to form a DARC layer(122a).
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