发明名称 Semiconductor device and method of manufacturing semiconductor device
摘要 A semiconductor device according to claim 1, wherein A method of manufacturing a semiconductor chip the carrier substrate A semiconductor device includes; a carrier substrate in which a semiconductor chip is mounted; a first land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a basis metal of an junction surface of the first land is exposed; and a second land that is mounted on the carrier substrate and placed on a region which is differ from a region for mounting the semiconductor chip, and a plating layer is deposited on a junction surface of the second land.
申请公布号 US7372167(B2) 申请公布日期 2008.05.13
申请号 US20050213788 申请日期 2005.08.30
申请人 SEIKO EPSON CORPORATION 发明人 OTSUKI TETSUYA
分类号 H01L23/48;H01L23/40;H01L23/52 主分类号 H01L23/48
代理机构 代理人
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