发明名称 |
Method of forming a gate of a semiconductor device |
摘要 |
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.
|
申请公布号 |
US7371669(B2) |
申请公布日期 |
2008.05.13 |
申请号 |
US20050283121 |
申请日期 |
2005.11.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOUN SUN-PIL;LEE CHANG-WON;SOHN WOONG-HEE;CHOI GIL-HEYUN;YOO JONG-RYEOL;LEE JANG-HEE;PARK JAE-HWA;LIM DONG-CHAN;LEE BYUNG-HAK;PARK HEE-SOOK |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|