| 摘要 |
FIELD: chemistry; processes to manufacture silicon carbide monocrystals by gaseous epitaxy. ^ SUBSTANCE: crucible comprises body and cover with pedestal, the cover being provided with concentric slots for heat-transfer elements. The latter increase temperature of cover surface portion, on which polycrystals grow, thus retarding their growth. As a result, SiC monocrystal being grown starts to grow also in direction 90 degrees to (0001) face, using polycrystal surface as pedestal extension. ^ EFFECT: in a few cycles, monocrystal diameter extends over the whole cover surface and continues to increase in height, despite of parasitic polycrystalline growth around. ^ 2 dwg |
