| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device where, while securing the detergency of ultrasonic cleaning, the amount of the cleaning water remaining in the surface of a lead frame is reduced, thus the formation of a thick oxide film on the surface of a plating film can be prevented. <P>SOLUTION: The method includes: a plating stage where a plating film is formed on the surface of a lead frame; a first ultrasonic cleaning stage where the lead frame is dipped into cleaning water heated at≤50°C, so as to perform ultrasonic cleaning after the plating stage; a second ultrasonic cleaning stage where the lead frame is dipped into cleaning water heated at≥60°C, so as to perform ultrasonic cleaning after the first ultrasonic cleaning stage; and a stage where draining and drying for the lead frame are performed after the second ultrasonic cleaning stage. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
