| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prolongs a channel length without impairing a degree of integration of a recess gate type MISFET, and is intended to suppress a short channel effect and reduce a leak current. <P>SOLUTION: A trench for accommodating a gate electrode is constituted of a first trench of a cylindrical or oval cylindrical shape deeper than a depth of a diffusion layer, and a second trench portion which extends from the first trench portion, and protrudes to the side of a source-drain diffusion layer more than the first trench portion. Upon an application of a gate voltage, a channel is formed between the source-drain diffusion layers along a surface of the gate electrode, and the channel length is prolonged. <P>COPYRIGHT: (C)2008,JPO&INPIT |
