| 摘要 |
A semiconductor storage device comprising: unit blocks each including memory cells, first row of sense amplifiers on one side of bit lines; second row of sense amplifiers on an other side of the bit lines; first switch means which switches a connection state between the one side of the bit lines and the first row of sense amplifiers; second switch means which switches a connection state between the other side of the bit lines and the second row of sense amplifiers; third switch means arranged in the approximate center of the bit lines in an extending direction thereof to switch a connection state of the bit lines; and refresh control means which divides the unit block into two areas and controls the refresh operation using the switch means and the row of sense amplifiers according to which area a selected word line to be refreshed is in.
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