| 摘要 |
The invention relates to a method for laterally cutting through a semiconductor wafer (1), wherein a semiconductor layer sequence (3) is grown on a growth substrate (2). Said sequence comprises a layer, which is provided as a separation layer (4), and at least one functional semiconductor layer (5) which follows the separation layer (4) in the direction of growth. Subsequently, ions are implanted into the separation layer (4) by the functional semiconductor layer (5) and the semiconductor wafer is cut through along the separation layer (4). One part (1a) of the semiconductor wafer (1), which contains the growth substrate (2), is separated. |
