OHMIC ELECTRODE FOR SIC SEMICONDUCTOR, METHOD FOR MANUFACTURE OF OHMIC ELECTRODE FOR SIC SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHODFOR MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

Disclosed are: an ohmic electrode (2) for a SiC semiconductor, comprising Si and Ni, or an ohmic electrode (2) for a SiC semiconductor, comprising Si and Ni and additionally comprising Au or Pt; a method for manufacturing the ohmic electrode (2); a semiconductor device using the ohmic electrode (2); and a method for manufacturing the semiconductor device.