发明名称 SEMICONDUCTOR ELEMENT DRIVING CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element driving circuit for suppressing variation in clamp voltage. SOLUTION: When an FET 13 is put in an ON state, constant currents I2 are supplied from a constant current source 2 to a resistance element 5 according to an input signal VIN, and currents running through the gate of an FET 13 are determined by an output side mirror pair 19. Also, a Zener diode 16 is connected between the gate and a potential point (the drain of an FET 8) which is made equal to the terminal voltage of the resistance element 5 in a current path at an FET 9 side of the output side mirror pair 19 so that a negative feedback path on which currents running through the gate of the FET 13 are made to flow in the potential point can be formed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008109239(A) 申请公布日期 2008.05.08
申请号 JP20060288289 申请日期 2006.10.24
申请人 DENSO CORP 发明人 UEDA GORO
分类号 H03K17/687;H03K17/08 主分类号 H03K17/687
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