| 摘要 |
PROBLEM TO BE SOLVED: To provide an HEMT that operates in normally-off state and is lower in on-state resistance. SOLUTION: The HEMT 10 is provided with a first semiconductor layer 24, a second semiconductor layer 26 that is formed on the first semiconductor layer 24 and is larger in band gap than the first semiconductor layer 24, a gate insulation film 34 formed on the second semiconductor layer 26, and a gate electrode 36 formed on the gate insulation film 34. In this case, when no voltage is applied to the gate electrode 36 in the HEMT 10, no two-dimensional electron gas layer (2DEG) is produced in a boundary 25 between the first semiconductor layer 24 and the second semiconductor layer 26. In the HEMT 10, as positive voltage applied to the gate electrode 36 increases, the two-dimensional electron gas layer (2DEG) is produced in the boundary 25 between the first semiconductor layer 24 and the second semiconductor layer 26 prior to the production of an inversion layer in the boundary 27 between the second semiconductor layer 26 and the gate insulation film 34. COPYRIGHT: (C)2008,JPO&INPIT
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