| 摘要 |
The laser diode comprising crystalline substrate ( 1 ) where set of subsequent n-type layers, set of optically active layers ( 5 ) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer ( 2 ), bottom n-type cladding layer ( 3 ) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer ( 7 ) and p-type contact layer ( 8 ). The electron blocking layer comprises In<SUB>x</SUB>, Al<SUB>y</SUB>Ga<SUB>1-x-y</SUB>, N alloy doped with magnesium where 1>=x>0.001 a 1>=y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers ( 2, 3, 4 ), set of optically active layers ( 5 ) and set of p-type layers ( 6, 7, 8 ) where the p-type waveguide layer ( 6 ) and p-type contact layer ( 7 ) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.
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