SEMICONDUCTOR DEVICES AND FABRICATION PROCESS THEREOF

摘要

A semiconductor device has an insulated gate transistor provided with a semiconductor substrate and a gate electrode arranged on the semiconductor substrate via a gate insulating film. The gate electrode includes an electrically-conductive buffer film for preventing any damage, which would occur if a main gate electrode portion were formed directly over the gate insulating film, and the main gate electrode portion formed over the buffer film. A fabrication process for the semiconductor device is also disclosed.