发明名称 |
INTERCONNECT LAYERS WITHOUT ELECTROMIGRATION |
摘要 |
A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line both residing in the ILD layer; (c) a diffusion barrier region residing in the ILD layer. The diffusion barrier region (i) physically isolates, (ii) electrically couples together, and (iii) are in direct physical contact with the first and second electrically conductive lines. The first and second electrically conductive lines each comprises a first electrically conductive material. The diffusion barrier region comprises a second electrically conductive material different from the first electrically conductive material. The diffusion barrier region is adapted to prevent a diffusion of the first electrically conductive material through the diffusion barrier region.
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申请公布号 |
US2008105977(A1) |
申请公布日期 |
2008.05.08 |
申请号 |
US20060556802 |
申请日期 |
2006.11.06 |
申请人 |
LUCE STEPHEN ELLINWOOD;MCDEVITT THOMAS LEDDY;STAMPER ANTHONY KENDALL |
发明人 |
LUCE STEPHEN ELLINWOOD;MCDEVITT THOMAS LEDDY;STAMPER ANTHONY KENDALL |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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