| 摘要 |
<p>A semiconductor device having a low input inductance. The semiconductor device comprises source finger electrodes (3) arranged in a predetermined direction on a main substrate (1), a drain finger electrodes (4) arranged with a predetermined interval from each source finger electrode (3), gate finger electrodes (2) interleaved between source finger electrodes (3) and the drain finger electrodes (4), source pads (6) arranged with predetermined intervals along one side of the finger electrode arrangement, drain pads (7) arranged between the source pads (6), gate pads (5) arranged with predetermined intervals along the other side of the finger electrode arrangement, source electrode wirings (LS, NS, M) for connecting the source finger electrodes (3) to the source pads (6), drain electrode wirings (LD, ND, P) for connecting the drain finger electrodes (4) to the drain pads (7), and a gate electrode wiring for connecting the gate finger electrodes (2) to the gate pads (5).</p> |
