| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can take out light with high polarization ratio while increasing the quantity of light taken out from a light take-out surface. <P>SOLUTION: The semiconductor light emitting element 1 comprises a substrate 2, a nitride semiconductor laminate structure 3 on the substrate 2, an anode 4, a cathode 6, and a reflective layer 7. The substrate 2 is composed of GaN single crystal and the major surface of the substrate 2 consists of a nonpolar m-surface. The nitride semiconductor laminate structure 3 includes an active layer 12 capable of emitting light, and consists of a GaN layer, an InGaN layer and an AlGaN layer. The reflective layer 7 reflects light traveling reversely to the light take-out direction A to the light take-out direction A and it is formed on the footprint 2a of the substrate 2 which is the surface on the side opposite to the light take-out direction A. The reflective layer 7 is composed of Al and Schottky connection is made with the footprint 2a of the substrate 2 in order to reflect the light. <P>COPYRIGHT: (C)2008,JPO&INPIT |
