| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a watery dispersing element for chemical/mechanical polishing that can polish a layer formed of copper and a copper alloy at a high speed and obtain a high quality polished surface that never generates copper residue in manufacturing the semiconductor device and a method for chemically and mechanically polishing a semiconductor device. <P>SOLUTION: The watery dispersing element for chemical/mechanical polishing including hydrogen peroxide A, persulfate B, abrasive grain C, a compound D having a heterocyclic ring, a polishing speed improver E, and a surface-active agent F, wherein mass ratio A/B of hydrogen peroxide A/persulfate B is 0.01 to 10 is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
