| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable and compact package type semiconductor device, and to provide a method of manufacturing the semiconductor device. SOLUTION: Etching is performed selectively from the rear side of a semiconductor substrate 2, where a device element 1, a pad electrode 4, and a first insulating film 3 are formed on a surface, for forming an opening. A second insulating film 9, which covers the side and rear of the semiconductor substrate 2, is formed. The first and second insulating films 3, 9 at the bottom of the opening are removed selectively for exposing the pad electrode 4 partially. A wiring layer 10 connected to the exposed pad electrode 4 electrically is formed along the side of the semiconductor substrate 2. Then, an electrode connection layer 11 covering the wiring layer 10 is formed. The rear side of the semiconductor substrate 2 is covered for forming a protective layer 12 having the opening in a sidewall electrode formation region. A sidewall electrode 13 is formed in a region exposed by the opening of the protective layer 12. COPYRIGHT: (C)2008,JPO&INPIT |
