METHOD FOR REMOVAL OF FOREIGN MATTER IN SEMICONDUCTOR SUBSTRATE REAR FACE

摘要

PROBLEM TO BE SOLVED: To effectively remove a BN thin piece attaching to a rear face of a semiconductor substrate when the semiconductor substrate is subjected to process treatment while holding the semiconductor substrate in a sample base whose outermost surface layer is pyrolytic boron nitride (PBN). SOLUTION: In the method for removing a PBN thin piece attaching to a rear face of a semiconductor substrate when the semiconductor substrate is subjected to process treatment with the semiconductor substrate W in a sample base 21 whose outermost surface layer 22 is PBN, the semiconductor substrate after process treatment is held with its rear face substantially opened by a lift pin 11 or the like and the PBN thin piece attaching to a rear face of the semiconductor substrate is removed in plasma 12 of fluorine-based gas. Since corrosive resistance of PBN to fluorine-based gas is extremely small, it is effectively and selectively removed in a short time by being exposed to fluorine-based gas. COPYRIGHT: (C)2008,JPO&INPIT