发明名称 SILICON WAFER AND ITS PRODUCTION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a silicon wafer having a flat surface of atomic level suitable for downscaling of LSI, and to provide its production process. SOLUTION: Assuming an arbitrary region of 3μm×3μm on the surface of the silicon wafer is the measuring region of an atomic force microscope (AFM) in a silicon wafer having such a level difference (step) structure as the flat surface (terrace) is a crystalline plane, 90% or more of measurements of the width (terrace width) of the flat surface measured along ten measuring lines at an interval of about 0.3μm in the direction substantially perpendicular to the level difference is 50 nm or above in the measuring region, and 90% or more of measurements of the height (step height) of the level difference measured along ten measuring lines in the direction substantially perpendicular to the level difference is equal to the height of one atomic layer in the measuring region. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008109011(A) 申请公布日期 2008.05.08
申请号 JP20060292313 申请日期 2006.10.27
申请人 COVALENT MATERIALS CORP 发明人 TAKEDA RYUJI;MATSUSHITA YOSHIAKI;NAGAHAMA HIROMI;HIRASAWA MANABU
分类号 H01L21/324;H01L21/02 主分类号 H01L21/324
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