发明名称 |
HIGH-QUALITY CMOS IMAGE SENSOR AND PHOTO DIODE |
摘要 |
Provided are a high-quality CMOS image sensor and a photo diode, which can be fabricated in sub-90 nm regime using nanoscale CMOS technology. The photo diode includes: a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region. The image sensor includes: a photo diode including an internal n-type region and a surface p-type region; a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges. The image sensor further includes a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.
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申请公布号 |
US2008105905(A1) |
申请公布日期 |
2008.05.08 |
申请号 |
US20070872922 |
申请日期 |
2007.10.16 |
申请人 |
KANG JIN Y;KOO JIN G;LEE SANG H |
发明人 |
KANG JIN Y.;KOO JIN G.;LEE SANG H. |
分类号 |
H01L31/101;H01L31/102 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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