发明名称 Multi-port memory devices
摘要 A semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element, wherein reading the generated signal protects data stored at the storage element from a read condition disturbance.
申请公布号 US2008106953(A1) 申请公布日期 2008.05.08
申请号 US20070986025 申请日期 2007.11.19
申请人 MADURAWE RAMINDA U 发明人 MADURAWE RAMINDA U.
分类号 G11C8/06;G11C7/10 主分类号 G11C8/06
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