发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR FABRICATING THE SAME
摘要 The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer. The data wire includes a data line, a source electrode connected to the data line, a drain electrode facing the source electrode and a data pad connected to one end of the data line. A passivation layer is formed on the gate insulating layer while exposing the data pad and a portion of the data line close to the data pad.
申请公布号 US2008108187(A1) 申请公布日期 2008.05.08
申请号 US20070964500 申请日期 2007.12.26
申请人 BYUN JAE-SEONG;LEE KUN-JONG;LIM HYUN-SU;CHA JONG-HWAN;JUNG BAE-HYOUN 发明人 BYUN JAE-SEONG;LEE KUN-JONG;LIM HYUN-SU;CHA JONG-HWAN;JUNG BAE-HYOUN
分类号 G02F1/1368;H01L21/00;G02F1/1343;G02F1/1362;H01L21/336;H01L29/49;H01L29/786 主分类号 G02F1/1368
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