GROWTH MANIPULATOR OF A VACUUM CHAMBER USED FOR GROWING SEMICONDUCTOR HETEROSTRUCTURES

摘要

The inventive growth manipulator of a vacuum chamber is used for growing semiconductor thin films by means of molecular-beam epitaxy. The inventive manipulator is placed in a vacuum chamber consisting of a body (1) and a lid (2). The manipulator comprises a bar (3) provided with a heater (4), which is mounted on the lower end thereof, a tubular hollow element (5) and the holder (6) of a semiconductor substrate (7). The bar is placed inside the tubular element. The semiconductor substrate holder is mounted in such a way that it can be grasped and released in a grasping mechanism provided with L-shaped cantilevers (8). The horizontal elements of said cantilevers are embodied in such a way that the substrate holder can be placed thereon. The vertical elements of the cantilevers are fastened by the top end thereof to a disc (9) having a central opening (10). The hollow tubular element passes through the disc central opening, to the circumference of which a carriage (11), provided with rollers (12) pressed against the external surface of the tubular elements, is connected. Height-adjustable arresters (13) are embodied on the internal surface of the lid, and height-displaceable arresters (14) are embodied on the external surface of the tubular element. A disc (15) which is provided with a central opening (16) and peripheral openings (17) is fixed to the lower end of the tubular element. The bar passes through the central opening (16) and the vertical elements of the cantilevers pass through the openings (17). Elastic elements (18) are disposed between the discs (9) and (15). The inventive manipulator can be used for vacuum chambers of different sizes.