| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of processing a wafer by which gettering sink effect is given to a wafer wherein a plurality of streets are formed like a grid on the surface of a substrate and devices are formed in a plurality of areas divided by the streets. <P>SOLUTION: The method is used to give gettering sink effect to a wafer wherein a plurality of streets are formed like a grid on the surface of a substrate and devices are formed in a plurality of areas divided by the streets. It includes a processing nucleus distortion removing step to remove processing distortion that is produced on the rear surface of the substrate in the wafer with a specified thickness by grinding the rear surface of the substrate; a gettering sink effect layer generation step wherein laser beam of a wavelength having light transmission against the substrate of the wafer is given to the condensing point positioned inside the substrate and a modified layer is formed inside the substrate so as to produce a gettering sink effect layer; and a division step to divide the wafer into chips along the streets. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
