| 摘要 |
PROBLEM TO BE SOLVED: To remove defects of a semiconductor integrated circuit in which a process window is narrow and it is not easy to reduce a chip area too in case of forming element separating insulating films. SOLUTION: A Si region 10 is made into a shape which consists of a straight line making four sides and a radii making four corners. Furthermore, an adjacent Si region 10 shares element separating insulating films 12 and is isolated by one element separating insulating film 12. Moreover, widths of the element separating insulating films 12 are made identical in a chip pattern 100. When the width of the element separating insulating film 12 is set to a and a curvature radius of a curve at the four corners in the Si region 10 is set to r, the width a and the curvature radius r are determined so as to fulfill the following qualifications: r>0.7a in the case where the element separating insulating film 12 intersects only in a cross shape, and r>1.5a in the case where the element separating insulating film includes an intersecting part in a T-shape. COPYRIGHT: (C)2008,JPO&INPIT
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