| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method and a film forming apparatus capable of uniformly forming a good-quality SiO<SB>2</SB>film at a high speed even at a low temperature of≤300°C, especially≤100°C. SOLUTION: In this method, the following steps are alternately executed: a step S1 of putting a workpiece into a processing chamber capable of being kept in vacuum state, and supplying an Si source into the processing chamber using an amino-silane gas of molecules each having two amino groups as the Si source, and oxygen radicals as an oxidizer; and a step S2 of supplying the oxygen radicals into the processing chamber. COPYRIGHT: (C)2008,JPO&INPIT
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