PHOTOMASK, MULTIPHASE EXPOSURE METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING INSULATING GATE-TYPE TRANSISTORS

摘要

A photo-mask, a multiphase exposure method and a method of manufacturing a semiconductor device are disclosed. The photo-mask mask includes a first light shielding region which is narrow and elongated, and a second light shielding region which is wider and more elongated than the first light shielding region and is away from the first light shielding region. A phase shifter part and a non-phase shifter part are provided adjacently to both sides of the first light shielding region. Two phase shifter parts or two non-phase shifter parts are respectively provided adjacently to both sides of the second light shielding part.